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NTE342 T-NPN, Si, RF Power Output, High Freq (PO 6W, 130-175MHz)

Model: NTE342
Availability :  In Stock
  • NTE342 T-NPN, Si, RF Power Output, High Freq (PO 6W, 130-175MHz)
  • NTE342 T-NPN, Si, RF Power Output, High Freq (PO 6W, 130-175MHz)
  • NTE342 T-NPN, Si, RF Power Output, High Freq (PO 6W, 130-175MHz)
$19.99
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Data Sheet

NTE342
Silicon NPN Transistor
RF Power Output
(PO = 6W, 175MHz)

Description:
The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.

Features:
High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
Ability to Withstand more than 20:1 VSWR Load when Operated at:
VCC = 15.2V, PO = 6W, f = 175MHz

Replaces:
ECG342

Additional Model #'s
76-NTE342
NTE342

UPC: 768249143710